V1.0DC-DC / DC-AC / PD3 min readSep 28, 2026

Buck-Boost Circuit Design

Three buck-boost schemes: SEPIC for low power, four-switch PL5501 (95% efficiency), 150V wide-voltage EG1151

For input below 25V, power below 60W and conversion efficiency not above 90%, the SEPIC scheme is preferred:

Solution chips
TI TPS61175 (built-in MOSFET), or Silergy SY7901 (external MOSFET required)
Input voltage
3V ~ 18V/25V (TPS61175 max 18V, SY7901 max 25V)
Output voltage
2V ~ 40V
Output current
TPS61175 max 3A, SY7901 max 6A (depends on the external MOSFET)
Max efficiency
90% (12V input, 24V 2A output)
Operating frequency
TPS61175 200k~2MHz; SY7901 fixed 600kHz

Features: wide input/output range, automatic buck-boost, simple circuit, small size, complete protection, low cost

Output voltage calculation: ignoring switch and diode drops, Vout=V_in*D/(1-D) Power inductor: L1=L2>=V_in(min)*D_max /(0.4*I_in*fs_min); the coupled-winding arrangement gives strong anti-saturation Coupling capacitor: C2 voltage rating >1.2*Vin_max, capacitance >= Iout*Dmax/(fs*0.1*Vin_min); use MLCC

Input/output capacitors: ceramic, or high-frequency low-ESR electrolytic

Typical application circuits (TPS61175 and SY7901 respectively):

Buck-Boost Circuit Design — figure 1
FIG.01 · CLICK TO ENLARGE
Buck-Boost Circuit Design — figure 2
FIG.02 · CLICK TO ENLARGE

High-efficiency (95%) Buck-Boost scheme for input within 35V and power within 200W:

The four-switch Buck-Boost is the mainstream approach for high-power step-up/step-down; its core advantage is that all four MOSFETs participate in switching, enabling synchronous rectification with efficiency above 95%, and automatic Buck/Boost/mixed mode selection by the Vin/Vout ratio.

Solution chip: PL5501, reference price RMB 6

Input voltage: 4V ~ 36V

Output voltage
3V ~ 36V
Output current
max 20A, depends on the external MOSFET
Switching frequency
150kHz ~ 1.2MHz
Peak efficiency
>=95% (10~20V input, 16.8V 5A output)
Chip package
QFN-32
Features
4-switch synchronous buck-boost topology, complete protection, up to 1.2MHz, supports dynamic adjustment of output vol

tage and current, strong gate drive current (2A), with CC/CV function.

Design case
10~30V input, 16.8V 10A CC/CV output
MOSFET selection
Vds>1.5*Vin_max; Rds(on) and switching speed as small as possible; package should aid heat dissipation
This example uses NCEP40T116
40V rating, 3mΩ Rds(on), 5ns rise/fall time
MOSFET power dissipation: P_loss=I_rms^2*R_ds(on)*D+0.5*V_ds*I_ds*(t_r+t_f )*fs Inductor calculation: in buck, L_BUCK>=((Vin_max)-Vout_min) )*Dmin)/(0.2*Iout*fs ) in boost, L_BOOST>=(Vin_min)*Dmax)/(0.2*Iout×fs )

Take the larger of the two

Applications: 12V/24V automotive systems, industrial power, USB PD fast charging and other high-power scenarios

Typical application circuit:

Buck-Boost Circuit Design — figure 3
FIG.03 · CLICK TO ENLARGE

For high power with input or output above 35V, or input below 35V with output power above 200W:

The four-switch Buck-Boost is the mainstream approach for high-power step-up/step-down; its core advantage is that all four MOSFETs participate in switching, enabling synchronous rectification with efficiency above 95%. Chip options for high input voltage are limited; here is EG Micro's EG1151 scheme:

Solution chip: EG1151

Input voltage: 7V ~ 150V

Output voltage
10V ~ 150V
Output current
max 20A, depends on the external MOSFET
Switching frequency
fixed 70kHz
Peak efficiency
>=95% (10~20V input, 16.8V 5A output)
Chip package
QFN-32
Features
four-switch buck-boost with current-limit and short-circuit protection, MOSFET drive current 1A (slightly

weak; driving high-power MOSFETs needs an external driver IC), maximum voltage rating 150V; suits wide-voltage-range,

high-current buck-boost applications, especially where the voltage is not constant; has CC/CV function.

Design cases: Case 1. 10~100V input, 28V 10A output

Case 2. 10~40V input, 15V 60A output

MOSFET selection: Vds>1.5*Vin_max; Rds(on) and switching speed as small as possible; package should aid heat dissipation

MOSFET power dissipation: P_loss=I_rms^2*R_ds(on)*D+0.5*V_ds*I_ds*(t_r+t_f )*fs Inductor calculation: in buck, L_BUCK>=((Vin_max)-Vout_min) )*Dmin)/(0.2*Iout*fs ) in boost, L_BOOST>=(Vin_min)*Dmax)/(0.2*Iout×fs )

Take the larger of the two

Applications: energy storage, 12V/24V automotive systems, industrial power, portable electronics, etc.

Application circuit 1 (10~100V input, 28V 10A output):

Buck-Boost Circuit Design — figure 4
FIG.04 · CLICK TO ENLARGE

Application circuit 2 (10~40V input, 15V 60A output):

Buck-Boost Circuit Design — figure 5
FIG.05 · CLICK TO ENLARGE
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